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Fair-Rite News
September 2024
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Critical Link News
August 2024
Critical Link announces the MitySOM-QC6490 System on Module!
The MitySOM-QC6490 production-ready System on Module is based on the Qualcomm QCS6490 or QCS5430 Snapdragon SoC!
Features Include:
- Support for Wi-Fi
- AI Engine brings the total performance up to 12 TOPS
- Field upgradable
- Expanded interfaces for industrial use cases
- Long-term support for Android OS upgrades, Linux, Ubuntu, Windows 11 IoT Enterprise, security updates, and enterprise-grade hardware
- Long-term support expected through July 2036 with the Product Longevity Program
Additional specification details and documentation can be found at: https://www.criticallink.com/product/mitysom-qc6490-system-on-module/
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Tianma News
January 2024
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Fair-Rite News
November 2022
Fair-Rite Sales Conference 2022 & 75th Year Anniversary
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Fair-Rite News
September 2022
Innovatech Associates & Fair-Rite participate in the New England EMI/EMC Summit at NTS September 2022!
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Tianma News
September2022
Innovatech Associates & Tianma Zoll Medical 2022 Achievement Award
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Fair-Rite News
July 2020
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Tianma News
February 2020
Tianma America, Inc. awards Innovatech Associates the 2019 Americas Customer Expansion Award of the Year at Tianma’s World Wide Sales Conference at CES, in Las Vegas in January of 2020!
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February 2018
Tianma awards Innovatech Associates the 2017 Eastern Region Sales Rep of the Year at CES 2018!
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Energous News
December 2017
RECEIVES INDUSTRY-FIRST FCC CERTIFICATION FOR OVER-THE-AIR, POWER-AT-A-DISTANCE WIRELESS CHARGING
Approval marks major step forward for smart home, IoT and mobile devices
Conference Call Scheduled for Dec. 27, 5:30 a.m. PT
SAN JOSE, CA -- (Marketwired) -- 12/26/17 -- Energous Corporation (NASDAQ: WATT), the developer of WattUp®, a revolutionary wire-free, power-at-a-distance charging technology, today announced Federal Communications Commission (FCC) certification of its first-generation WattUp Mid Field transmitter, which sends focused, RF-based power to devices at a distance. As the first FCC certification for power-at-a-distance wireless charging under Part 18 of the FCC's rules, this development represents a new era of wireless charging, and opens up a tremendous opportunity for the electronics industry.
Energous' WattUp Mid Field transmitter underwent rigorous, multi-month testing to verify it met consumer safety and regulatory requirements. As the first Part 18 FCC approved power-at-a-distance wireless charging transmitter, the certification marks a significant milestone for the consumer electronics industry and paves the way for future wireless charging ubiquity for nearly any small electronic device, including smartphones, tablets, fitness trackers, smart watches, earbuds, wireless keyboards and mice, smart speakers and more.
The company's WattUp Mid Field transmitter can deliver power via radio frequency (RF) energy to WattUp-enabled electronic devices at a distance of up to three feet. As the only technology that can do both contact-based and non-contact-based wireless charging, as well as charge multiple devices at once, WattUp is highly scalable and automatically charges devices, as needed, until they are topped off. While older charging technologies allow for only contact-based charging, Energous is the only company to achieve Wireless Charging 2.0 to-date, which is the ability to charge devices both at contact (including fast charging large battery devices such as smartphones and tablets), as well as power-at-a-distance. Similar to WiFi, the WattUp ecosystem ensures interoperability between receivers and transmitters, regardless of the manufacturer, making the entire ecosystem flexible and accessible for consumers and manufacturing partners.
"Older wireless charging technologies have received limited adoption over the past 15 years, and are confined to contact-based charging only. The FCC certification of Energous' power-at-a-distance wireless charging transmitter is a major market milestone. It opens up options, outside of just contact-based charging, to Wireless Charging 2.0: an ecosystem where devices can be charged both, via pad and at a distance," said Stephen R. Rizzone, president and CEO of Energous. "Untethered, wire-free charging -- such as charging a fitness band even while wearing it -- is exactly what consumers have been waiting for. We are now in a position to move our consumer electronics, IoT and smart home customers forward at an accelerated pace."
"WattUp from Energous represents an incredibly positive lifestyle change," said Martin Cooper, Energous Board of Directors member and 'Father of the Cell Phone' -- a pioneer and visionary of the wireless industry. "This ground-breaking technology allows users to automatically charge their WattUp-enabled devices without having to remove them from their wrist or pocket, plug them in or place them on a mat to charge, freeing them from ever having to think about charging their devices again."
WattUp transmitter technology will continue to advance in both power, distance, efficiency and scale, with applications that could include integration into the bezel of computer monitors, soundbars, smart speakers, TVs, smart lighting, and other electronics in the home, office and beyond.
"Providing meaningful power-at-a-distance is a real game changer for wireless charging," said Mark Tyndall, senior vice president corporate development and strategy, Dialog Semiconductor. "As the strategic partner and exclusive world-wide supplier of Energous' WattUp technology, Dialog provides early adopters with the assurance of chip supply and support that comes from a top tier semiconductor company that ships millions of chips each month into some of the world's most demanding customers."
This represents the first time FCC equipment certification has been awarded to any device that charges wirelessly at a distance, and operates under Part 18 of the FCC's rules. The FCC's Part 18 rules permit higher-power operations than are permitted under the Part 15 rules that have been used to approve other at a distance charging devices.
The company will be demonstrating its very latest WattUp technology at CES 2018, the world's largest consumer electronics show, January 9-12 in Las Vegas, NV. To learn more about Energous, please visit Energous.com or follow the company on Twitter, Facebook, Instagram or LinkedIn.
Conference Call
Energous will hold a conference call and webcast on Wednesday, December 27, 2017 at 5:30 a.m. PT to review the FCC certification details in greater depth and answer questions. To join the conference call:
Phone: 866-235-9911 (domestic); 412-317-1083 (international)
Replay: Accessible through January 10, 2018
877-344-7529 (domestic); 412-317-0088 (international); passcode 10115359
Webcast: Accessible at ir.energous.com; archive available for approximately one year
About Energous Corporation
Energous Corporation is the developer of WattUp® -- an award-winning, wire-free charging technology that will transform the way consumers and industries charge and power electronic devices at home, in the office, in the car and beyond. WattUp is a revolutionary radio frequency (RF) based charging solution that delivers intelligent, scalable power via radio bands, similar to a Wi-Fi router. WattUp differs from older wireless charging systems in that it delivers contained power-at-a-distance -- thus resulting in a wire-free experience that saves users from having to remember to plug in their devices. For more information, please visit Energous.com.
Safe Harbor Statement
This press release contains forward-looking statements that describe our future plans and expectations. These statements generally use terms such as "believe," "expect," "may," "will," "should," "could," "seek," "intend," "plan," "estimate," "anticipate" or similar terms. Examples of our forward-looking statements in this release include statements in quotations from management and statements about our partnership with Dialog and development of market demand, production and deployment of products. Our forward-looking statements speak only as of this date; they are based on current expectations and we undertake no duty to update them. Factors that could cause actual results to differ from what we expect include: unexpected delays in our ability to develop commercially feasible technology; uncertain timing of further regulatory approvals; timing of customer orders and success of customer products; our dependence on distribution partners; market acceptance of our technology; and intense industry competition. We urge you to consider those factors, and the other risks and uncertainties described in our most recent annual report on Form 10-K and subsequent quarterly reports on Form 10-Q, in evaluating our forward-looking statements.
Energous Public Relations
PR@energous.com
408-963-0200
Investor Relations Contact:
Bishop IR
Mike Bishop
(415) 894-9633
IR@energous.com
Source: Energous Corporation
Released December 26, 2017
Inventek Systems announces iMATRIX, a complete, robust, and intuitive Cloud platform solution!
December 2017
From "Thing" to Cloud, iMatrix enables seamless, intelligent, and dynamic communication between the physical world and the internet.
iMATRIX HIGHLIGHT BRIEFS:
- iMatrix Cloud studio greatly reduces all of the complexities involved in architecting an intuitive, seamless, robust and user friendly IoT Cloud platform.
- iMatrix demonstrates how quickly customers can immediately control/measure and synthesize “Things” without all of the networking configuration complexities required with traditional Cloud solutions offered today.
- Automatic Resource Allocation
- Millions of Transactions/Second
- iMatrix scales dynamically based on loadings and stores data in a real time stream and in to a time series data base that can be recalled and analyzed at any time
- Customers are also able to customize iMatrix using the same API structure regardless of sensor profile
- Docker Deployed Containers
- Front end CoAP processors
- Influx DB for TSD
- REDIS DB for RTD
- Google Compute Engines – RESTful API
- Auto Control / Sensor Definition
- Automatic Device Source File Generation
- Automatic Encryption Key generation
- Open Source WEB UI and Extensive API Suite
- Mobile Platform Provisioning
- Android/iOS Provisioning system
- Secure Encryption Key Provisioning
- iMatrix includes geographic grid mapping of sensor farms (floors/buildings), and associated values for the sensors can all be grouped based on specific categories
- iMatrix addresses one of the most significant IoT challenges, Manufacturing
- Link to Automatic Product Fulfillment Facilities - How well was the device tested?
- What is the history of test/rework/quality/performance (how well did the Thing perform in manufacturing)
- iMatrix logs key points along the manufacturing process by serial number to identify root causes / reliability/ fault finding / mac address issues are all logged
- iMatrix enables customers, OEMs and CMs to have a complete history for each Thing from architectural definition, through assembly and finally to field deployment.
- iMatrix also provides a data base to manage and validate mac address assignments
Jibo News
December 2017
INNOVATECH’S STRATEGIC CUSTOMER JIBO, MAKES TIME MAGAZINE’S 25 BEST INVENTIONS
EPC NEWS
December 2017
EPC announces the availability of the EPC9126HC, a 100 V, 150 A high current pulsed laser diode driver evaluation board. In a LiDAR system, used to create 3-D maps for autonomous vehicle applications, speed and accuracy of object detection is critical. As demonstrated by this board, the rapid transition capability of eGaN FETs provide power pulses to drive the laser up to ten times faster than an equivalent MOSFET, thus enhancing the overall performance of a LiDAR system.
Helping Autonomous Vehicles "See" Better with GaN-Based LiDAR Systems!
As demonstrated by this EPC9126HC board, the rapid transition capability of eGaN FETs provide power pulses to drive the laser up to ten times faster than an equivalent MOSFET, thus enhancing the overall performance of a LiDAR system.
The EPC9126HC development board is primarily intended to drive laser diodes and features an EPC2001C ground-referenced eGaN FET driven by a Texas Instruments UCC27611 gate driver. The EPC2001C is a 100 V maximum voltage device capable of current pulses up to 150 A. The EPC9126HC can drive 75 A pulses into a high power triple junction laser diode with a pulse width as low as 5 ns.
The board includes multiple ultra-low inductance connection options for mounting laser diodes and can drive these via a discharging a capacitor (as shipped) or directly from a power bus. The board does not include a laser diode, which must be supplied by the user to evaluate specific applications.
The printed circuit board is designed to minimize the power loop inductance while maintaining mounting flexibility for the laser diode. It includes multiple on-board passive probes for voltages and discharge capacitor current measurement, and comes equipped with SMA connections for input and sensing designed for 50 Ω measurement systems. In addition, the user can enable an optional precision narrow pulse generator.
Finally, the EPC9126HC can also be used for other applications requiring a ground-referenced eGaN FET, for example in Class E or similar circuits |
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EPC NEWS
October 2017
New Product Announcement
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Today we announces the availability of two new demonstration kits -- the EPC9127, a complete wireless power kit including a 10 W, class 2 amplifier, category 3 receiver device and the EPC9128, consisting of a 16 W, class 3 amplifier and two receiver devices (categories 3 and 4). These systems, coupled with previously announced EPC9120, 33 W class 4 and the EPC9121 multi-mode kit capable of operating to either an AirFuel Class 2 standard with a category 3 device or a Qi (A6)/PMA standard with a compatible receiving device provide a full range of wireless power demonstration kits to allow for complete, wide-spread implementation.
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Cut the Cord! 
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With the introduction of these demonstration kits, EPC covers a wide range of the AirFuel resonant technology standard. The popularity of resonant wireless power transfer is increasing rapidly, with end applications evolving quickly from mere cell phone battery charging, to the powering of large surface areas where handheld tablets, laptops, and computers - and, soon TV sets, lamps, other electrically powered appliances - simultaneously anywhere on the surface.
The purpose of these demonstration kits is to simplify the evaluation process of using eGaN FETs and ICs for highly efficient wireless power transfer. The kits, operating at 6.78 MHz (the lowest ISM band) utilize the high frequency switching capability of EPC gallium nitride transistors to facilitate wireless power systems. The efficiency of these systems is about 87% from input to the amplifier to the output of the receiver (end-to-end), and with future improvements in architecture and GaN IC technology this number can reach into the 95% range.
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Source and Receiving Device Boards Available Separately
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Amplifier Boards 
The source (amplifier) boards included in these kits are highly efficient Zero Voltage Switching (ZVS), Class-D amplifiers configured in an optional half-bridge topology (for single-ended configuration) or default full-bridge topology (for differential configuration), and includes the gate driver(s), oscillator, and feedback controller for the pre-regulator. This allows for compliance testing operating to the AirFuel standard over a wide load range. These amplifier boards are available separately as EPC9509 and EPC9510 for evaluation in existing customer systems.
Receive Device Boards
The receiving device boards include the Category 3 EPC9513 (5 V, 5 W ) and Category 4 EPC9515 (5 V, 10 W) receiving device boards included in the wireless power demonstration kits are also available separately for customers that have their own source boards or for those who want to design wireless power systems powering multiple devices simultaneously. These boards allow customers to bring various wirelessly powered consumer electronic products quickly to market.
With the wide range of efficient receivers that can be used to power anything from lamps to laptops to tablets, while remaining compatible with cell phone charging, the system designer now has all the tools needed to create an entire wireless power, large area, efficient system.
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EPC NEWS
May 2017
EPC Releases Video Series on How GaN is Changing the Way We Live
EL SEGUNDO, Calif.–(BUSINESS WIRE)–Efficient Power Conversion Corporation (www.epc-co.com) has created and posted to its website six short videos presenting end-customer applications using eGaN® FETs and ICs. These videos show how GaN technology is changing the way we live and challenging power systems design engineers to incorporate the high performance of gallium nitride FETs and ICs into their next generation power system designs.
The application demonstration videos posted are:
- APEC 2017: Applications for GaN
At APEC 2017, the premier power conversion conference, EPC showcased more than 25 applications where GaN is Changing the Way We Live. In this video, Alex Lidow, CEO, takes the viewer on a tour of our booth, showing eGaN FETs and ICs in a wide range of applications including a 2 x 3 foot tabletop wirelessly powering multiple devices simultaneously.
- Cut the Cord! GaN-Based Wirelessly Powered Tabletop
In this video, EPC demonstrates a wireless power tabletop simultaneously powering a laptop, a video monitor, Google Home, Amazon Alexa, a desk lamp, and a cell phone. GaN is making possible wireless power not only for our phones, but also for our homes.
- LiDAR GaN Driver
Today’s eGaN® FETs and ICs switch ten times faster than the aging power MOSFET. This high speed gives LiDAR (Light Distancing and Ranging) systems superior resolution, faster response time, and greater accuracy. This technology is rapidly gaining traction in applications where this increased accuracy is vital, such as autonomous vehicles and augmented reality systems.
- 48 V – 1.8 V DC-DC Conversion Gen 5 GaN FET vs. MOSFET
With its latest generation process, EPC has dealt another blow to the silicon MOSFET power element, bringing improved performance while decreasing the size and cost. This video shows a side-by-side comparison of a 100 V GaN FET outperforming a comparable MOSFET in a much smaller footprint with 30% less power loss and 3X the power density.
- 150 V – 12 V DC-DC Conversion Gen 5 GaN FET vs. MOSFET
EPC has dealt another blow to the silicon MOSFET power element, bringing improved performance while decreasing the size and cost. This video shows a side-by-side comparison of a 200 V GaN FET outperforming a comparable MOSFET in a much smaller footprint – 15X smaller – with 40% less power loss and 3X the power density.
- Motor Drive Applications
In this video is an example of a 48 V, 10 A 3-phase GaN Inverter reference design from Texas Instruments using the LMG5200. The GaN solution has better thermal profiles where heat sinks can be eliminated and the lower inductance reduces size and weight. This reference design has an incredible efficiency rating of 98.5%!
According to Alex Lidow, CEO and co-founder of EPC, “This collection of short videos presents specific end-use applications currently enabled or enhanced by the high performance of gallium nitride FETs and ICs. These videos are designed to spark innovation in the use of GaN products by innovative, forward-thinking power system design engineers.”
The GaN application demonstration videos are easily accessible on the EPC video library or through the EPC YouTube Video Channel.
EPC NEWS
April 2017
Efficient Power Conversion (EPC) Publishes Ninth Reliability Report Documenting Millions of GaN Technology Device Hours with Zero Failures After Rigorous Stress Testing
EL SEGUNDO, Calif.–(BUSINESS WIRE)–EPC announces its Phase Nine Reliability Report showing the results of a rigorous set of thermo-mechanical board level reliability testing. The Phase Nine Reliability Report adds to the growing knowledge base previously published in EPC’s first eight reports and represents an ongoing commitment to study, learn, and share information on the reliability of GaN technology.
According to Dr. Alex Lidow, CEO and co-founder of EPC, “Demonstration of the reliability of new technology is a major undertaking and one that EPC takes very seriously. The test results described in this ninth reliability report show that EPC gallium nitride products in wafer level chip-scale packages have the superior reliability, cost, and performance to displace silicon as the technology of choice for semiconductors. The time has come to finally ditch the package.”
EPC FETs and ICs are made in wafer level chip-scale packages (WLCSP), which improves performance, lowers cost, and minimizes board real estate, while improving reliability. WLCSP offer excellent thermal dissipation, which is critical when the devices are soldered to printed circuit boards for end-use applications. The main section of this report covers thermo-mechanical board level reliability.
Devices for this study were chosen that span package size and solder layout configurations and a predictive model for solder joint integrity was developed. Customers can apply the thermo-mechanical stress model given in this report to predict reliability in their specific end-use applications. Using the correlation between strain at the solder joint together with fatigue lifetime, customers can use the model to predict thermal cycles to failure for arbitrary stress conditions related to specific end-use applications.
The cumulative reliability information compiled over EPC’s nine reliability reports shows that eGaN® FETs and ICs have solid reliability and can operate with very low probability of failures within expected lifetimes of end products. Given the superior performance, cost, and reliability reported of GaN products over silicon devices, the time has come to move away from the less reliable packaged silicon devices and move to chip-scale GaN technology FETs and ICs.
About EPC
EPC is the leader in enhancement mode gallium nitride based power management devices and was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN) FETs as power MOSFET replacements in applications such as DC-DC converters, wireless power transfer, envelope tracking, RF transmission, power inverters, remote sensing technology (LiDAR), and class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs.
www.epc-co.com
eGaN is a registered trademark of Efficient Power Conversion Corporation, Inc.
EPC NEWS ROUNDUP
January 2012
As a new year begins the transition from the aging power MOSFET to higher frequency switching eGaN devices continues. Driver IC technology accelerates design cycles by providing designers with a plug and play solution to unlock the efficiency capabilities of eGaN FETs. As an example, in our applications spotlight we explore how an eGaN FET based brick converter prototype outperforms comparable state-of-the-art MOSFET-based commerical converters for Power over Ethernet Power Sourcing Equipment (PoE-PSE). A key variable controlling adoption of a displacement technology is answering the question, "Is it reliable?"
Over 1.7 million accumulated device hours of reliability testing validate the readiness of eGaN FETs. Read the latest results in our Phase Five Testing application note.
Read on for the latest update on EPC and eGaN FET technology and be sure to check our calendar of upcoming events for opportunities to learn how your designs can benefit from new benchmarks of efficiency and power density.
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eGaN FETs for Isolated PoE - Power Sourcing Equipment
Operating at about twice the device switching frequency, eGaN FET-based, fully-regulated, half-brick PSE converter prototype outperforms comparable state-of-the-art MOSFET-based commercial converters.
The eGaN-based converter's output power is 100 W more than the nearest MOSFET-based commerical converter. For more details please see Volume 6 of The eGaN FET-Silicon Power Shoot-out application note in Power Electronics.
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The National LM5113 from Texas Instruments has been honored with an Electronic Products' Product of the Year award. The editors of Electronic Products evaluated thousands of products launched in 2011.
The LM5113 is the industry's first driver designed specifically for enhancement mode gallium nitride FETs. Enhancement-mode GaN FETs enable new levels of efficiency and power density compared to standard metal-oxide semiconductor field-effect transistors (MOSFETs) due to their low on-resistance (Rdson) and gate charge (Qg) as well as their ultra-small footprint, but driving them reliably presented new challenges. National's LM5113 driver integrated circuit (IC) overcomes these challenges,
enabling power designers to realize the benefits of GaN FETs in a variety of popular power topologies.
"We congratulate Texas Instruments on this prestigious award," said Alex Lidow, co-founder and CEO for Efficient Power Conversion Corporation. "The release of the LM5113 bridge driver has been instrumental in accelerating the adoption of our eGa N® FETs by offering designers a true plug and play solution. The LM5113 bridge driver unlocks the efficiency capability of eGaN FETs, enabling designers to achieve new performance benchmarks in power and system density."
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Upcoming Events
Applied Power Electronics Conference
Location: Orlando, Florida
February 5, 2012
"Putting GaN to Work in Your Power Supply" 
Speaker: Robert V. White; Embedded Power Labs
Read Abstract
February 9, 2012
"Parlleling eGaN FETs"
Speaker: Alex Lidow, PhD; EPC
Read Abstract
February 23, 2012
IIC China Conference
Location: Shenzhen, China
"eGaN FETs for Efficient Power Conversion"
Speaker: Alex Lidow, PhD; EPC
Read Abstract
March 22, 2012
GOMAC Tech Conference
Location: Las Vegas, Nevada
"Radiation Tolerant Enhancement Mode Gallium Nitride (eGaN®) FET Characteristics"
Speaker: Alex Lidow, PhD; EPC
Read Abstract
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Efficient Power Conversion Corporation (EPC) Achieves ISO 9001:2008 Certification for Quality Management
EPC has received ISO certification for the design, development, marketing and sales of gallium nitride power transistors and power management devices
EL SEGUNDO, Calif. – September 2011 - Efficient Power Conversion Corporation (www.epc-co.com) the leader in energy-efficient enhancement mode gallium nitride (eGaN®) power transistors used in power conversion applications, has received the International Organization for Standardization ISO 9001:2008 certification for its quality management system.
The ISO standards are published by the International Organization for Standardization and available through national standards bodies. To achieve certification, EPC passed an assessment conducted by Det Norske Veritas, an ANSI-ASQ National Accreditation Board (ANAB) certified auditor.
Upon receiving ISO certification, Alex Lidow, co-founder and CEO, noted, “Achieving ISO 9001:2008 certification is recognition that for EPC quality has been a way of life from the beginning. Our quality management system is dedicated to continuous improvement, our processes are well documented and controlled, changes are made in a considered way and we listen systematically to our customers.”
About EPC
EPC is the leader in enhancement mode Gallium Nitride based power management devices. EPC is the first to introduce enhancement-mode Gallium-Nitride-on-Silicon (eGaN) FETs as power MOSFET replacements in applications such as servers, netbooks, notebooks, LED lighting, cell phones, base stations, micro-inverters, and class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs. Visit our web site: www.epc-co.com.
Follow EPC on Twitter at http://twitter.com/#!/EPC_CORP
Sign-up to receive EPC updates via email: http://bit.ly/EPCupdates
eGaN is a registered trademark of Efficient Power Conversion Corporation, Inc.
Press contact: Efficient Power Conversion: Joe Engle tel: 310.986.0350 email: joe.engle@epc-co.com
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 September 07, 2011
RFaxis Rocks the Wireless Ecosystem Again With World's First Ever Plug and Play Pure CMOS Single-Chip/Single-Die RF Front-End IC for 5GHz WLAN
Samples Revolutionary Fully Integrated All-in-One RF Front-End for Next Generation Wi-Fi Connectivity. Click here for more details.
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June, 2011
EPC New Product Announcement : Second Generation 200V eGaN FET
EPC is pleased to announce the introduction of the EPC2010, a second-generation enhanced performance eGaN® FET that is lead-free and RoHS-compliant. The EPC2010 FET is a 200 VDS device with a maximum RDS(ON) of 25 milliohms with 5 V applied to the gate.
EPC has also announced the release of the EPC9003 development board. The EPC9003 development board is a 200 V maximum input voltage, 5 A maximum output current, half bridge with on board gate drives, featuring the EPC2010 200V eGaN FET. The purpose of this development board is to simplify the evaluation process of the EPC2010 eGaN FET by including all the critical components on a single board that can be easily connected into any existing converter.
EPC20101 datasheet can be found at: http://epc-co.com/epc/documents/datasheets/EPC2010_datasheet_final.pdf
EPC9003 datasheet can be found at: http://epc-co.com/epc/documents/guides/EPC9003_qsg.pdf
Application note detailing the performance improvements with second generation devices at http://epc-co.com/epc/documents/product-training/Characteristics_of_Second_Generation_eGaN_FETs.pdf
Lead Free Assembly FAQ (Frequently Asked Questions) added at: http://epc-co.com/epc/FAQ/AssemblingEPCLeadFreeeGaNFETs.aspx
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April, 2011
Alex Lidow, CEO, interviewed in ECN's Tinker’s Toolbox
The interview explores the attributes of GaN technology, applications opened as a result of GaN's superior performance to MOSFETs and reasons for the take-up of eGaN FET products over the past year.
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March, 2011
EPC Introduces Two Industry Leading Lead-Free and RoHS Compliant eGaN FETs
EPC announces the availability of our first two lead-free, RoHS compliant eGaN FETs. These new-generation of eGaN FETs also have improved electrical performance, matched with additional support documentation to help the system designer deliver leading edge eGaN FET based product faster and with less engineering effort. The EPC2001 and EPC2015 are the first lead-free, halogen free, and RoHS-compliant eGaN FETs to be introduced.
The EPC2001 FET is a 100 VDS device with a maximum RDS(ON) of 7 milliohms with 5 V applied to the gate, and the EPC2015 is a 40 VDS with a maximum RDS(ON) of 4 milliohms. Both eGaN FETs provide significant performance advantages over similar state-of-the-art silicon-based power MOSFETs. Both devices have low on resistance, are smaller than silicon devices with similar resistance and have many times superior switching performance.
Applications that benefit from eGaN FET performance increases include DC-DC power supplies, point-of-load converters, class D audio amplifiers, notebook and netbook computers, LED drive circuits and telecom base stations.
“Protection of the environment is a high priority for EPC and a driving force for offering lead-free, RoHS-compliant eGaN FETs. The EPC2001 and EPC2015 are the first lead free and RoHS compliant eGaN FETs to be introduced and it is our plan to have all eGaN FETs available lead-free and RoHS-compliant within the next 4 months.” said Alex Lidow, co-founder and CEO.
Both products are immediately available. Please contact Innovatech Associates for details.
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 AppliedMicro to Demonstrate Advanced OTN Solutions at OFC/NFOEC 2011
AppliedMicro will be appearing at the Los Angeles Convention Center March 8-10 to highlight a full slate of advanced new optical transport solutions.
Read Applied Micro’s February’s Newsletter
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February, 2011
EPC in the Media: An Interview With Alex Lidow on GaN Developments
PowerPulse interviews Alex Lidow, Co-founder and CEO of Efficient Power Conversion Corporation (EPC). EPC designs, develops, and produces Gallium-Nitride-on-Silicon transistors used in power management.
Click here to read the article.
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January, 2011
Greenliant Ships Industry's First Industrial-Grade 8 GB Embedded Solid-State Drive
 SANTA CLARA, Calif. - January 19, 2011 - Greenliant Systems, a leader in energy-efficient, highly secure and reliable solid-state storage products, has started mass production of its industrial-grade 8 GB NANDrive™ with ATA/IDE interface. The addition of Greenliant's GLS85LP1008P solid-state drive (SSD) marks the widest range of capacities-512 MB, 1 GB, 2 GB, 4 GB and 8 GB-of small form factor, embedded SSDs that can withstand the extreme environments of automotive and industrial applications.
The GLS85LP1008P NANDrive combines Greenliant's high-performance NAND controller with 8 GB of single-level cell (SLC) NAND flash die in a tiny 14mm x 24mm x 1.9mm package. The 91 ball grid array (BGA), 1mm ball pitch package gives customers an embedded SSD that is easy, space-saving and cost-effective for mounting to a system motherboard.
"Greenliant NANDrive devices have the same footprint across all capacities, which allows our customers to seamlessly add more storage when they need it," said Nobu Higuchi, vice president of application engineering and product marketing, Greenliant. "Our 8 GB I-grade NANDrive is a high-capacity SSD in a very small size. Combined with its advanced security features, the I-grade NANDrive protects customer data in applications that require long operating life and durability."
The GLS85LP1008P NANDrive has a 50 MByte/sec sustained Read speed and a 39 MByte/sec sustained Write speed, while staying energy-efficient with typical active-mode power consumption as low as 500mW. Its enhanced reliability features include data loss prevention during unexpected power interruptions and product endurance up to 100 million host-write cycles.
About Greenliant NANDrive Devices
The Greenliant NANDrive family manages all NAND flash complexities and allows embedded system designers to quickly integrate mass data storage solutions into their designs without having to make any firmware changes. Because NANDrive complies with ATA interface protocols supported by all standard embedded operating systems, designers no longer face the risk of host software revalidation cycles. To further ease integration and reduce inventory management, NANDrive solves the compatibility and obsolescence issues of pairing a NAND controller with new NAND flash devices. As an integrated multi-chip package solution, NANDrive eliminates the need for long qualification cycles when there is a change of NAND flash technology; customers need only qualify the NANDrive as a mass storage subsystem. For more information about the Greenliant NANDrive product portfolio, visit www.NANDrive.com.
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December 2010
Learn more about the Intersil technology that keeps you in touch with your world at upcoming International CES in Las Vegas, Nevada.
 Join us at the upcoming International CES show in Las Vegas, Nevada, to see and hear the many ways Intersil innovations power your human experience. Don’t miss your opportunity to hear the amazing Intersil D2Audio technology and meet audio legend Mark Levinson.
Click here for more details. Contact us reserve your meeting at both the LVCC and the Venetian Hotel private demo room.
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December 2010
Cypress PSOC 5 design contest with over $10,000 in cash prizes !!!
 ARM and Cypress are challenging the design community to develop interesting and unique solutions using the PSoC 5 Platform. Designs will be judged on creativity, efficiency, and usefulness as well as their usage of PSoC’s analog and digital resources and quality of the PSoC Creator component.
There will be many opportunities to earn prizes throughout the 6 month challenge. Prize categories include most original design, best video, and a unique category chosen exclusively by the community of peers. In addition to these, community members who participate in forums, blogs and raitng designs will be eligible for prizes.
For full contest deatails or to submit your design today visit:
www.cypress.com/go/challenge
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November 2010
Efficient Power Conversion Corporation (EPC) Market Leading eGaN™ Products Win Electronic Design News (EDN) China Innovation Award
EL SEGUNDO, Calif-November 18, 2010 -Efficient Power Conversion Corporation’s (EPC) family of enhancement-mode gallium nitride on silicon (eGaN™) power FETs have been awarded the “Editor’s Choice Award” in the power device and module segment of the 2010 EDN China Innovation Awards.
"Enhancement-mode eGaN by Efficient Power Conversion Corporation was honored with Editor's Choice Award by EDN China Innovation Award's panel of judges based on the online voting by the Chinese design engineers. It is the best-recognized product yet to be fully adopted in target markets. We also recognize EPC's potential significant contribution to the Chinese engineering communities with its innovations to set a new course in the power technology roadmap", said William Zhang, Publisher of EDN China.
“We are proud that the panel of judges and readers of EDN China have selected eGaN FET products from the more than 150 entrants. This award substantiates that EPC’s enhancement-mode GaN power transistors represent a major breakthrough in power conversion technology. The award supports our belief that performance from silicon-based MOSFETs has reached the end of the road and that eGaN technology will lead the way for continued increases in performance in power transistors.” said Alex Lidow, EPC’s co-founder and Chief Executive Officer.
Spanning a range of 40 Volts to 200 Volts, and 4 milliohms to 100 milliohms, eGaN FETs demonstrate significant performance advantages over state-of-the-art silicon-based power MOSFETs. EPC’s technology produces devices that are smaller than similar resistance silicon devices and have many times superior switching performance.
Applications that benefit from this eGaN performance are DC-DC power supplies, point-of-load converters, class D audio amplifiers, notebook and netbook computers, solar microinverters, Power over Ethernet (PoE), LED drive circuits, telecom base stations, and cell phones, to name just a few.
Products based on eGaN technology are available today and are priced between $1.12 and $5.00 in 1k quantities. They are immediately available through Digi-Key Corporation at http://digikey.com/Suppliers/us/Efficient-Power-Conversion.page?lang=en
EPC is the leader in enhancement mode Gallium Nitride based power management devices. EPC is the first to introduce enhancement-mode Gallium-Nitride-on-Silicon (eGaNTM) FETs as power MOSFET replacements in applications such as servers, netbooks, notebooks, LED lighting, cell phones, base stations, microinverters, and class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs. Visit our web site: www.epc-co.com.
Press contact: Joe Engle tel: 310.986.0350 email: joe.engle@epc-co.com
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May, 2010
Greenliant Systems Acquires NANDrive, NAND Controller and Specialty Flash Memory Assets from Microchip Technology
Click here to read the press release
Click here to read the announcement letter from Greenlight™s CEO.
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 May, 2010
Intersil Completes its Acquisition of Techwell, Inc.
"The Techwell acquisition brings Intersil unique capabilities that complement our industrial video market businesses," said Dave Bell, Intersil's President and Chief Executive Officer. "We look forward to Techwell's mixed signal video products helping to significantly increase our overall industrial business, which will become our largest end market," continued Mr. Bell.
« Read Full Press Release Here » « Read FAQs Here »
With the recent merger of Intersil and Techwell, the business integration process has begun with Terry Brophy leading the effort. Look for an upcoming communication on how the customer services and order management processes are to operate during the transition period. For questions regarding the sales integration, please contact Dave Loftus or Chris Lister.
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 May, 2010
Intersil: New Corporate Overview
Full corporate overview that can be used as introduction or supportive material in any external presentation.
Note: Large File. File size: 11.1 MB
« Download Here »
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January 2009 -- Intersil
Intersil Press Releases
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DECEMBER 14, 2007
Three of INNOVATECH’S Principals have been awarded EDN’s Hot 100 Products of 2007 (http://www.edn.com/article/CA6511180.html) !!
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Tuesday November 6, 9:00 am ET -- Cypress
Cypress's PSoC(R) CapSense(TM) Solution Is the Leader for Capacitive Sensing in Handsets With Over 70 Percent Market Share, According to Industry (40 million PSoC® CapSense™ devices into mobile phones from across the globe in less than two years) !!
Click here for details
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October, 2007 -- Cypress
Cypress Expands InstaClock™ Family
Cypress has released version 1.05 of the popular InstaClock solution that provides a fast and simple way to generate common frequency devices on your own PC – instead of waiting days or weeks for samples from another supplier. The new version offers 67 additional configurations for a total of more than 100 options now available for the popular CY22800 device. This new release offers a wide range of predefined configurations targeted towards USB, Ethernet, PCI, Audio/Video and CPU Clock frequencies. The devices generated by the InstaClock software can be ordered as standard part numbers at authorized distributors.
Cypress also has introduced the new CY22801 device, which allows users to create custom configurations. The CY22801 is compatible with Cypress’s CyClocksRT software and can be programmed using the InstaClock USB programmer. Now users can create a clock that will meet their specific timing requirements if they cannot find a predefined configuration within the InstaClock software for the CY22800.
See for yourself how fast and easy InstaClock really is. Visit the InstaClock website today to get an InstaClock kit, download a datasheet, see a cross-reference guide, or download InstaClock software
Visit the InstaClock Website to learn more, and download the latest InstaClock software to view all the available options. Remember, use the Configure Device feature to help select which options are suited for your requirements.
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October, 2007 -- Inventek Systems
Enhanced Navigation Performance SiRF III GPS module
Inventek Systems ISM300F1-C3 and ISM300F1-C4 product launch
The Inventek ISM300x is a 20-channel Global Positioning System (GPS) receiver module (C4 is SBAS enabled) offered in an extremely compact Surface Mount Device (SMD) module form factor The module provides high sensitivity, high gain, and low power. It is designed for a broad spectrum of OEM applications and is based on the fast and deep GPS signal search capabilities of the SiRFStarIII architecture.
Enhancements include:
Enhanced Navigation
- Improved cross-correlation detection
- Altered search strategy for improved weak-signal acquisition
- Improved positioning results, particularly in transitional environments
- Improved EGNOS
Improved Jamming Mitigation
- Better identification and dismissal of jamming signals through enhanced Carrier Wave (CW) detection.
Improved Ephemeris Availability
- Incremental ephemeris collection allowing quicker time-to-first-fix (TTFF)
- Improved ephemeris collection under challenging dynamics (Movement)
Flexible Power Control
- Improved hardware “on/off” control - 10uA mode
- For implementations that do not include hardware “on/off” control, software can now be used to turn off the receiver
Applications
This module is designed for quick and easy integration into GPS-related applications - especially compact size devices - such as:
Hand-held Devices for Personal Positioning and Navigation
PDA, Pocket PC and other computing devices
Fleet Management / Asset Tracking
AVL and Location-Based Services
At Inventek Systems our top priority is to service our customers as an extension of their own organization. We take great pride in earning and developing long term partnerships as we strive to exceed your expectations.
Our expertise in GPS Modular solutions combined with a very unique and compelling business model, positions us as the premier leader in market competitive system solutions across a wide range of GPS applications.
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September 16, 2007
INVENTEK SYSTEMS and NEC ELECTRONICS AMERICA introduce the AF-ISM300-EV850-TFT, a 3.5” QVGA PANEL, V850 32b MCU AND ISM300x GPS Development Platform at the Embedded Systems Conference in Boston at the Hynes Convention Center September 19th-20th, 2007 (Booth location number 1009)!!!
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June 5, 2007
INNOVATECH ROCKIES RECEIVES THE "TEAM WORK AWARD" RECOGNITION FROM FUTURE ELECTRONICS !!
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February 27, 2007
INVENTEK SYSTEMS ANNOUNCES THE PRODUCTION RELEASE OF SiRF GPS MODULAR SOLUTIONS
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