October 2017


New Product Announcement


Today we announces the availability of two new demonstration kits -- the EPC9127, a complete wireless power kit including a 10 W, class 2 amplifier, category 3 receiver device and the EPC9128, consisting of a 16 W, class 3 amplifier and two receiver devices (categories 3 and 4). These systems, coupled with previously announced EPC9120, 33 W class 4 and the EPC9121 multi-mode kit capable of operating to either an AirFuel Class 2 standard with a category 3 device or a Qi (A6)/PMA standard with a compatible receiving device provide a full range of wireless power demonstration kits to allow for complete, wide-spread implementation.

Cut the Cord!

With the introduction of these demonstration kits, EPC covers a wide range of the AirFuel resonant technology standard. The popularity of resonant wireless power transfer is increasing rapidly, with end applications evolving quickly from mere cell phone battery charging, to the powering of large surface areas where handheld tablets, laptops, and computers - and, soon TV sets, lamps, other electrically powered appliances - simultaneously anywhere on the surface.

The purpose of these demonstration kits is to simplify the evaluation process of using eGaN FETs and ICs for highly efficient wireless power transfer.  The kits, operating at 6.78 MHz (the lowest ISM band) utilize the high frequency switching capability of EPC gallium nitride transistors to facilitate wireless power systems. The efficiency of these systems is about 87% from input to the amplifier to the output of the receiver (end-to-end), and with future improvements in architecture and GaN IC technology this number can reach into the 95% range.

Source and Receiving Device Boards Available Separately

Amplifier Boards

The source (amplifier) boards included in these kits are highly efficient Zero Voltage Switching (ZVS), Class-D amplifiers configured in an optional half-bridge topology (for single-ended con­figuration) or default full-bridge topology (for differential configuration), and includes the gate driver(s), oscillator, and feedback controller for the pre-regulator. This allows for compliance testing operating to the AirFuel standard over a wide load range. These amplifier boards are available separately as EPC9509 and EPC9510 for evaluation in existing customer systems.

Receive Device Boards

The receiving device boards include the Category 3 EPC9513 (5 V, 5 W and Category 4 EPC9515 (5 V, 10 W) receiving device boards included in the wireless power demonstration kits are also available separately for customers that have their own source boards or for those who want to design wireless power systems powering multiple devices simultaneously. These boards allow customers to bring various wirelessly powered consumer electronic products quickly to market.

With the wide range of efficient receivers that can be used to power anything from lamps to laptops to tablets, while remaining compatible with cell phone charging, the system designer now has all the tools needed to create an entire wireless power, large area, efficient system.




Dialog News

Aug-September 2017



MaxLinear, Inc. Completes Acquisition of Exar

May 2017

CARLSBAD, Calif., May 12, 2017 (GLOBE NEWSWIRE) -- MaxLinear, Inc. (NYSE:MXL), a leading provider of radio frequency (RF) and mixed-signal integrated circuits for cable and satellite broadband communications, the connected home, data center, metro, long-haul fiber networks, and wireless infrastructure, today announced that it has completed its previously announced acquisition of Exar, Inc. (NYSE:EXAR) (or “Exar”).

The transaction was conducted by means of a tender offer (the “Offer”) to acquire all of the outstanding shares of common stock of Exar (“Shares”) for a purchase price of $13.00 per share, followed by a second-step merger.  The Offer expired at 12:00 midnight (Eastern Time) at the end of May 11, 2017.  As of the expiration of the Offer, a total of 44,385,399 Shares had been validly tendered into and not withdrawn pursuant to the Offer, representing approximately 85.4% of the outstanding Shares.  An additional 895,150 Shares had been tendered by notice of guaranteed delivery, representing approximately 1.7% of the outstanding Shares at such time. Following the acceptance of Shares tendered in the Offer, Purchaser acquired sufficient Shares to consummate the Merger without a vote of Exar’s stockholders and on May 12, 2017, following acceptance of the tendered Shares, a subsidiary of MaxLinear merged with and into Exar, with Exar surviving as a wholly-owned subsidiary of MaxLinear.  According to the merger agreement, Exar stockholders will receive $13.00 for each Share outstanding immediately prior to the effective time of the merger. MaxLinear paid approximately $687 million in cash in connection with the acquisition.

The acquisition significantly furthers MaxLinear’s strategic goals of increasing revenue scale, diversifying revenues by end customers and addressable markets, and expanding its analog and mixed-signal footprint on existing tier-1 customer platforms. Exar adds a diverse portfolio of high performance analog and mixed-signal products constituting power management and interface technologies that are ubiquitous functions in wireless and wireline communications infrastructure, broadband access, industrial, enterprise networking, and automotive platforms. MaxLinear intends to leverage combined technological expertise, cross-selling opportunities and distribution channels to significantly expand its serviceable addressable market.

“We are pleased to complete the acquisition of Exar,” said Dr. Kishore Seendripu, CEO of MaxLinear. “Exar’s talented team and expertise in power management and interface technologies will enable us to more effectively serve our customers and furthers our goal of increased scale and diversification."

About MaxLinear

MaxLinear, Inc. (NYSE:MXL) is a leading provider of radio frequency (RF) and mixed-signal integrated circuits for cable and satellite broadband communications, the connected home, data center, metro, long-haul fiber networks, and wireless infrastructure markets. MaxLinear is headquartered in Carlsbad, California. For more information, please visit

MXL is MaxLinear’s registered trademark. Other trademarks appearing herein are the property of their respective owners.

Cautionary Note Concerning Forward-Looking Statements

This communication contains forward-looking statements within the meaning of the “safe harbor” provisions of the Private Securities Litigation Reform Act of 1995, including statements with respect to the anticipated effects of the recently completed acquisition of Exar; prospects for the combined company, including (without limitation) expectations with respect to its addressable markets, opportunities within those markets, and the ability of the combined company to serve those markets; the growth strategies of MaxLinear generally and expectations with respect to the impact of the acquisition on MaxLinear’s growth strategies; and expectations with respect to the products and customers of the combined company after the recently completed acquisition of Exar. These statements are based on management’s current expectations and beliefs and are subject to a number of factors and uncertainties that could cause actual results to differ materially from those described in the forward-looking statements. Forward-looking statements may contain words such as “will be,” “will,” “expected,” “anticipate,” “continue,” or similar expressions and include the assumptions that underlie such statements. The following factors, among others, could cause actual results to differ materially from those described in the forward-looking statements: the challenges and costs of closing, integrating, restructuring, and achieving anticipated synergies, particularly in light of differences in the businesses and operations of the two companies; the ability to retain key employees, customers and suppliers; and other factors affecting the business, operating results, and financial condition of either MaxLinear or Exar, including those set forth in the most recent Annual Reports on Form 10-K, Quarterly Reports on Form 10-Q, and Current Reports on Form 8-K reports filed by MaxLinear and Exar, as applicable, with the Securities and Exchange Commission (the “SEC”). All forward-looking statements are based on the estimates, projections, and assumptions of MaxLinear management, as applicable, as of the date hereof, and MaxLinear is under no obligation (and expressly disclaim any such obligation) to update or revise any forward-looking statements whether as a result of new information, future events, or otherwise.




TDk InvenSense NEWS

May 2017

Dear Valued Customer,

We are pleased to share with you today that TDK Corporation has completed the acquisition of InvenSense, Inc.  We believe this acquisition will enable us to better serve your needs with a more comprehensive sensor platform with broader core competencies.

This acquisition brings together our sensor solution capabilities spanning the mobile, IoT, automotive and industrial markets with a broad portfolio of motion, location, pressure, ultrasonic and audio/microphone sensor technologies under the TDK Sensors System Business Company. Together, we believe our combined technologies and global reach will accelerate and enhance our roadmap for future sensor product solutions and make us the best possible sensor technology partner for you and your organization.

TDK has a strong commitment to customer satisfaction and extending that same commitment to the acquisition of InvenSense is one of the many reasons why this combination makes sense. We appreciate your business and remain as committed as ever to provide the highest level of quality, service and support that you have come to expect from InvenSense. InvenSense will be part of the newly formed Sensor Systems Business Company of TDK, operating as a wholly owned subsidiary and will continue to conduct business under the InvenSense brand name. There will be no changes to your sales and support contacts as well as the process of issuing or receiving orders. Additional information on the acquisition is available at
We look forward to enriching our support and solutions to help you to achieve your business and technology objectives. Should you have any questions, please contact your InvenSense sales representative.

Behrooz Abdi
CEO and General Manager
MEMS Sensor Group
Sensor System Business Company






May 2017


EPC Releases Video Series on How GaN is Changing the Way We Live

EL SEGUNDO, Calif.–(BUSINESS WIRE)–Efficient Power Conversion Corporation ( has created and posted to its website six short videos presenting end-customer applications using eGaN® FETs and ICs. These videos show how GaN technology is changing the way we live and challenging power systems design engineers to incorporate the high performance of gallium nitride FETs and ICs into their next generation power system designs.

The application demonstration videos posted are:

  1. APEC 2017: Applications for GaN
    At APEC 2017, the premier power conversion conference, EPC showcased more than 25 applications where GaN is Changing the Way We Live. In this video, Alex Lidow, CEO, takes the viewer on a tour of our booth, showing eGaN FETs and ICs in a wide range of applications including a 2 x 3 foot tabletop wirelessly powering multiple devices simultaneously.
  2. Cut the Cord! GaN-Based Wirelessly Powered Tabletop
    In this video, EPC demonstrates a wireless power tabletop simultaneously powering a laptop, a video monitor, Google Home, Amazon Alexa, a desk lamp, and a cell phone. GaN is making possible wireless power not only for our phones, but also for our homes.
  3. LiDAR GaN Driver
    Today’s eGaN® FETs and ICs switch ten times faster than the aging power MOSFET. This high speed gives LiDAR (Light Distancing and Ranging) systems superior resolution, faster response time, and greater accuracy. This technology is rapidly gaining traction in applications where this increased accuracy is vital, such as autonomous vehicles and augmented reality systems.
  4. 48 V – 1.8 V DC-DC Conversion Gen 5 GaN FET vs. MOSFET
    With its latest generation process, EPC has dealt another blow to the silicon MOSFET power element, bringing improved performance while decreasing the size and cost. This video shows a side-by-side comparison of a 100 V GaN FET outperforming a comparable MOSFET in a much smaller footprint with 30% less power loss and 3X the power density.
  5. 150 V – 12 V DC-DC Conversion Gen 5 GaN FET vs. MOSFET
    EPC has dealt another blow to the silicon MOSFET power element, bringing improved performance while decreasing the size and cost. This video shows a side-by-side comparison of a 200 V GaN FET outperforming a comparable MOSFET in a much smaller footprint – 15X smaller – with 40% less power loss and 3X the power density.
  6. Motor Drive Applications
    In this video is an example of a 48 V, 10 A 3-phase GaN Inverter reference design from Texas Instruments using the LMG5200. The GaN solution has better thermal profiles where heat sinks can be eliminated and the lower inductance reduces size and weight. This reference design has an incredible efficiency rating of 98.5%!

According to Alex Lidow, CEO and co-founder of EPC, “This collection of short videos presents specific end-use applications currently enabled or enhanced by the high performance of gallium nitride FETs and ICs. These videos are designed to spark innovation in the use of GaN products by innovative, forward-thinking power system design engineers.”

The GaN application demonstration videos are easily accessible on the EPC video library or through the EPC YouTube Video Channel.








April 2017

Efficient Power Conversion (EPC) Publishes Ninth Reliability Report Documenting Millions of GaN Technology Device Hours with Zero Failures After Rigorous Stress Testing

EL SEGUNDO, Calif.–(BUSINESS WIRE)–EPC announces its Phase Nine Reliability Report showing the results of a rigorous set of thermo-mechanical board level reliability testing. The Phase Nine Reliability Report adds to the growing knowledge base previously published in EPC’s first eight reports and represents an ongoing commitment to study, learn, and share information on the reliability of GaN technology.

According to Dr. Alex Lidow, CEO and co-founder of EPC, “Demonstration of the reliability of new technology is a major undertaking and one that EPC takes very seriously. The test results described in this ninth reliability report show that EPC gallium nitride products in wafer level chip-scale packages have the superior reliability, cost, and performance to displace silicon as the technology of choice for semiconductors. The time has come to finally ditch the package.”

EPC FETs and ICs are made in wafer level chip-scale packages (WLCSP), which improves performance, lowers cost, and minimizes board real estate, while improving reliability. WLCSP offer excellent thermal dissipation, which is critical when the devices are soldered to printed circuit boards for end-use applications. The main section of this report covers thermo-mechanical board level reliability.

Devices for this study were chosen that span package size and solder layout configurations and a predictive model for solder joint integrity was developed. Customers can apply the thermo-mechanical stress model given in this report to predict reliability in their specific end-use applications. Using the correlation between strain at the solder joint together with fatigue lifetime, customers can use the model to predict thermal cycles to failure for arbitrary stress conditions related to specific end-use applications.

The cumulative reliability information compiled over EPC’s nine reliability reports shows that eGaN® FETs and ICs have solid reliability and can operate with very low probability of failures within expected lifetimes of end products. Given the superior performance, cost, and reliability reported of GaN products over silicon devices, the time has come to move away from the less reliable packaged silicon devices and move to chip-scale GaN technology FETs and ICs.

About EPC

EPC is the leader in enhancement mode gallium nitride based power management devices and was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN) FETs as power MOSFET replacements in applications such as DC-DC converters, wireless power transfer, envelope tracking, RF transmission, power inverters, remote sensing technology (LiDAR), and class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs.

eGaN is a registered trademark of Efficient Power Conversion Corporation, Inc.






Dialog Field Team Newsletter

April 2017 - Newsletter (.pdf)



Dialog Semiconductor Ushers in the Bluetooth® 5 Era with Unrivalled Functionality

March 2017

Dialog Semiconductor Ushers in the Bluetooth 5 Era with Unrivalled Functionality


One of the first Bluetooth® 5 qualified SoCs, DA14586 also includes an integrated microphone interface allowing customers to add intuitive intelligent voice control to any cloud connected product that has a microphone and speaker. 

London, United Kingdom – March 1, 2017 – As the connected devices market enters a new era of connectivity with Bluetooth 5.0, Dialog Semiconductor plc (XETRA:DLG), a provider of highly integrated power management, AC/DC power conversion, solid state lighting (SSL) and Bluetooth® low energy (LE) technology, today announced the next generation in its SmartBond family – DA14586. The all-new System-on-Chip (SoC) is the company’s first standalone device that is qualified to support the latest Bluetooth 5.0 specification, delivering the lowest power consumption and unrivalled functionality for advanced use cases. 

Derived from the SmartBond™ DA14580, which has proven to be the smallest, highest integrated and lowest power Bluetooth SoC in mass production over the past three years, the DA14586 maintains this leading flagship position for these benchmark metrics, offering even greater flexibility to create more advanced applications with the smallest footprints and power budgets. Other enhancements include an advanced power management setup with both buck and boost converters, which enable support of most primary cell battery types.

“The Bluetooth 5 standard is one of the most highly-anticipated developments in connectivity, and Dialog is amongst the first out of the gate to enable development on this standard with a qualified standalone SoC,” said Sean McGrath, SVP and GM, Connectivity, Dialog Semiconductor. “Not only is DA14586 following in the SmartBond tradition of flexibility and low power consumption, but now, with Bluetooth 5 support and an integrated microphone interface, we have an SoC that opens the door to a new era of connected devices and applications.”

In addition to Bluetooth 5 support, DA14586 has double the memory of its predecessor for user applications, making it ideal for adding Bluetooth low energy to proximity tags, beacons, connected medical devices and smart home applications. Meanwhile, an integrated microphone interface reduces the system cost of voice-command remote controls, a fast growing emerging market. Advanced features are also included allowing for Mesh based networked applications to be simply supported.

Like all Dialog SmartBond solutions, DA14586 is easy to design-in and supports fully-hosted applications. The SoC is supported by a complete development environment and Dialog’s SmartSnippets™ software to help engineers optimize software for power consumption. For cost-sensitive applications, the SmartBond family will also include the DA14585 with integrated One-Time Programmable (OTP) memory as an alternative to flash memory. 

The DA14586 and DA14585 and their associated development kit will be available for purchase through Mouser and Digi-Key.

Dialog will also be showcasing the DA14586 and DA14585 devices at the upcoming Bluetooth World event in Santa Clara on the 28th and 29th of March 2017.

For more information, visit








January 2012


As a new year begins the transition from the aging power MOSFET to higher frequency switching eGaN devices continues.  Driver IC technology accelerates design cycles by providing designers with a plug and play solution to unlock the efficiency capabilities of eGaN FETs.  As an example, in our applications spotlight we explore how an eGaN FET based brick converter prototype outperforms comparable state-of-the-art MOSFET-based commerical converters for Power over Ethernet Power Sourcing Equipment (PoE-PSE).
A key variable controlling adoption of a displacement technology is answering the question, "Is it reliable?" 
Over 1.7 million accumulated device hours of reliability testing validate the readiness of eGaN FETs.  Read the latest results in our Phase Five Testing application note.
Read on for the latest update on EPC and eGaN FET technology and be sure to check our calendar of upcoming events for opportunities to learn how your designs can benefit from new benchmarks of efficiency and power density.
eGaN FETs for Isolated PoE - Power Sourcing Equipment
Operating at about twice the device switching frequency, eGaN FET-based, fully-regulated, half-brick PSE converter prototype outperforms comparable state-of-the-art MOSFET-based commercial converters.
The eGaN-based converter's output power is 100 W more than the nearest MOSFET-based commerical converter. For more details please see Volume 6 of The eGaN FET-Silicon Power Shoot-out application note in Power Electronics.


2011 Product of the Year
The National LM5113 from Texas Instruments has been honored with an Electronic Products' Product of the Year award. The editors of Electronic Products evaluated thousands of products launched in 2011.  

The LM5113 is the industry's first driver designed specifically for enhancement mode gallium nitride FETs. Enhancement-mode GaN FETs enable new levels of efficiency and power density compared to standard metal-oxide semiconductor field-effect transistors (MOSFETs) due to their low on-resistance (Rdson) and gate charge (Qg) as well as their ultra-small footprint, but driving them reliably presented new challenges. National's LM5113 driver integrated circuit (IC) overcomes these challenges,

enabling power designers to realize the benefits of GaN FETs in a variety of popular power topologies.


"We congratulate Texas Instruments on this prestigious award," said Alex Lidow, co-founder and CEO for Efficient Power Conversion Corporation. "The release of the LM5113 bridge driver has been instrumental in accelerating the adoption of our eGa N® FETs by offering designers a true plug and play solution. The LM5113 bridge driver unlocks the efficiency capability of eGaN FETs, enabling designers to achieve new performance benchmarks in power and system density."
Upcoming Events

Applied Power Electronics Conference

Location: Orlando, Florida

February 5, 2012

"Putting GaN to Work in Your Power Supply" APEC2012

Speaker: Robert V. White; Embedded Power Labs

Read Abstract


February 9, 2012

"Parlleling eGaN FETs"

Speaker: Alex Lidow, PhD; EPC

Read Abstract


IIC China

February 23, 2012

IIC China Conference

Location: Shenzhen, China

"eGaN FETs for Efficient Power Conversion"

Speaker: Alex Lidow, PhD; EPC

Read Abstract


March 22, 2012  

GOMAC Tech Conference

Location: Las Vegas, Nevada

"Radiation Tolerant Enhancement Mode Gallium Nitride (eGaN®) FET Characteristics" 

Speaker: Alex Lidow, PhD; EPC 

Read Abstract




epcEfficient Power Conversion Corporation (EPC) Achieves ISO 9001:2008 Certification for Quality Management

EPC has received ISO certification for the design, development, marketing and sales of gallium nitride power transistors and power management devices

EL SEGUNDO, Calif. – September 2011 - Efficient Power Conversion Corporation ( the leader in energy-efficient enhancement mode gallium nitride (eGaN®) power transistors used in power conversion applications, has received the International Organization for Standardization ISO 9001:2008 certification for its quality management system.

The ISO standards are published by the International Organization for Standardization and available through national standards bodies. To achieve certification, EPC passed an assessment conducted by Det Norske Veritas, an ANSI-ASQ National Accreditation Board (ANAB) certified auditor.

Upon receiving ISO certification, Alex Lidow, co-founder and CEO, noted, “Achieving ISO 9001:2008 certification is recognition that for EPC quality has been a way of life from the beginning. Our quality management system is dedicated to continuous improvement, our processes are well documented and controlled, changes are made in a considered way and we listen systematically to our customers.”

About EPC

EPC is the leader in enhancement mode Gallium Nitride based power management devices. EPC is the first to introduce enhancement-mode Gallium-Nitride-on-Silicon (eGaN) FETs as power MOSFET replacements in applications such as servers, netbooks, notebooks, LED lighting, cell phones, base stations, micro-inverters, and class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs. Visit our web site:

Follow EPC on Twitter at!/EPC_CORP

Sign-up to receive EPC updates via email:

eGaN is a registered trademark of Efficient Power Conversion Corporation, Inc.

Press contact: Efficient Power Conversion: Joe Engle tel: 310.986.0350 email:






logo_RFaxisSeptember 07, 2011

RFaxis Rocks the Wireless Ecosystem Again With World's First Ever  Plug and Play Pure CMOS Single-Chip/Single-Die RF Front-End IC for 5GHz WLAN

Samples Revolutionary Fully Integrated All-in-One RF Front-End for Next Generation Wi-Fi Connectivity. Click here for more details.






epcJune, 2011
EPC New Product Announcement : Second Generation 200V eGaN FET

EPC is pleased to announce the introduction of the EPC2010, a second-generation enhanced performance eGaN® FET that is lead-free and RoHS-compliant.  The EPC2010 FET is a 200 VDS device with a maximum  RDS(ON) of 25 milliohms with 5 V applied to the gate.

EPC has also announced the release of the EPC9003 development board. The EPC9003 development board is a 200 V maximum input voltage, 5 A maximum output current, half bridge with on board gate drives, featuring the EPC2010 200V eGaN FET.  The purpose of this development board is to simplify the evaluation process of the EPC2010 eGaN FET by including all the critical components on a single board that can be easily connected into any existing converter.

EPC20101 datasheet can be found at:
EPC9003 datasheet can be found at:
Application note detailing the performance improvements with second generation devices at
Lead Free Assembly FAQ (Frequently Asked Questions) added at:






April, 2011
Alex Lidow, CEO, interviewed in ECN's Tinker’s Toolbox

The interview explores the attributes of GaN technology, applications opened as a result of GaN's superior performance to MOSFETs and reasons for the take-up of eGaN FET products over the past year.






March, 2011
EPC Introduces Two Industry Leading Lead-Free and RoHS Compliant eGaN  FETs

EPC announces the availability of our first two lead-free, RoHS compliant eGaN FETs. These new-generation of eGaN FETs also have improved electrical performance, matched with additional support documentation to help the system designer deliver leading edge eGaN FET based product faster and with less engineering effort. The EPC2001 and EPC2015 are the first lead-free, halogen free, and RoHS-compliant eGaN FETs to be introduced.

The EPC2001 FET is a 100 VDS device with a maximum RDS(ON) of 7 milliohms with 5 V applied to the gate, and the EPC2015 is a 40 VDS with a maximum RDS(ON) of 4 milliohms. Both eGaN FETs provide significant performance advantages over similar state-of-the-art silicon-based power MOSFETs. Both devices have low on resistance, are smaller than silicon devices with similar resistance and have many times superior switching performance.

Applications that benefit from eGaN FET performance increases include DC-DC power supplies, point-of-load converters, class D audio amplifiers, notebook and netbook computers, LED drive circuits and telecom base stations.

“Protection of the environment is a high priority for EPC and a driving force for offering lead-free, RoHS-compliant eGaN FETs. The EPC2001 and EPC2015 are the first lead free and RoHS compliant eGaN FETs to be introduced and it is our plan to have all eGaN FETs available lead-free and RoHS-compliant within the next 4 months.” said Alex Lidow, co-founder and CEO.

Both products are immediately available. Please contact Innovatech Associates for details.






applied microAppliedMicro to Demonstrate Advanced OTN Solutions at OFC/NFOEC 2011

AppliedMicro will be appearing at the Los Angeles Convention Center March 8-10 to highlight a full slate of advanced new optical transport solutions.

Read Applied Micro’s February’s Newsletter






February, 2011
EPC in the Media:  An Interview With Alex Lidow on GaN Developments

PowerPulse interviews  Alex Lidow, Co-founder and CEO of Efficient Power Conversion Corporation (EPC). EPC designs, develops, and produces Gallium-Nitride-on-Silicon  transistors used in power management.

Click here to read the article.






January, 2011
Greenliant Ships Industry's First Industrial-Grade 8 GB Embedded Solid-State Drive

greenliantSANTA CLARA, Calif. - January 19, 2011 - Greenliant Systems, a leader in energy-efficient, highly secure and reliable solid-state storage products, has started mass production of its industrial-grade 8 GB NANDrive™ with ATA/IDE interface. The addition of Greenliant's GLS85LP1008P solid-state drive (SSD) marks the widest range of capacities-512 MB, 1 GB, 2 GB, 4 GB and 8 GB-of small form factor, embedded SSDs that can withstand the extreme environments of automotive and industrial applications.

The GLS85LP1008P NANDrive combines Greenliant's high-performance NAND controller with 8 GB of single-level cell (SLC) NAND flash die in a tiny 14mm x 24mm x 1.9mm package. The 91 ball grid array (BGA), 1mm ball pitch package gives customers an embedded SSD that is easy, space-saving and cost-effective for mounting to a system motherboard.

"Greenliant NANDrive devices have the same footprint across all capacities, which allows our customers to seamlessly add more storage when they need it," said Nobu Higuchi, vice president of application engineering and product marketing, Greenliant. "Our 8 GB I-grade NANDrive is a high-capacity SSD in a very small size. Combined with its advanced security features, the I-grade NANDrive protects customer data in applications that require long operating life and durability."

The GLS85LP1008P NANDrive has a 50 MByte/sec sustained Read speed and a 39 MByte/sec sustained Write speed, while staying energy-efficient with typical active-mode power consumption as low as 500mW. Its enhanced reliability features include data loss prevention during unexpected power interruptions and product endurance up to 100 million host-write cycles.

About Greenliant NANDrive Devices
The Greenliant NANDrive family manages all NAND flash complexities and allows embedded system designers to quickly integrate mass data storage solutions into their designs without having to make any firmware changes. Because NANDrive complies with ATA interface protocols supported by all standard embedded operating systems, designers no longer face the risk of host software revalidation cycles. To further ease integration and reduce inventory management, NANDrive solves the compatibility and obsolescence issues of pairing a NAND controller with new NAND flash devices. As an integrated multi-chip package solution, NANDrive eliminates the need for long qualification cycles when there is a change of NAND flash technology; customers need only qualify the NANDrive as a mass storage subsystem. For more information about the Greenliant NANDrive product portfolio, visit






December 2010
Learn more about the Intersil technology that keeps you in touch with your world at upcoming International CES in Las Vegas, Nevada.

international ces 2010Join us at the upcoming International CES show in Las Vegas, Nevada, to see and hear the many ways Intersil innovations power your human experience. Don’t miss your opportunity to hear the amazing Intersil D2Audio technology and meet audio legend Mark Levinson.

Click here for more detailsContact us reserve your meeting at both the LVCC and the Venetian Hotel private demo room.






December 2010
Cypress  PSOC 5 design contest with over $10,000 in cash prizes !!!

ARM & Cypress Design ChallengeARM and Cypress are challenging the design community to develop interesting and unique solutions using the PSoC 5 Platform. Designs will be judged on creativity, efficiency, and usefulness as well as their usage of PSoC’s analog and digital resources and quality of the PSoC Creator component.

There will be many opportunities to earn prizes throughout the 6 month challenge. Prize categories include most original design, best video, and a unique category chosen exclusively by the community of peers. In addition to these, community members who participate in forums, blogs and raitng designs will be eligible for prizes.

For full contest deatails or to submit your design today visit:







November 2010
Efficient Power Conversion Corporation (EPC) Market Leading eGaN™ Products Win Electronic Design News (EDN) China Innovation Award

 EL SEGUNDO, Calif-November 18, 2010 -Efficient Power Conversion Corporation’s (EPC) family of enhancement-mode gallium nitride on silicon (eGaN™) power FETs have been awarded the “Editor’s Choice Award” in the power device and module segment of the 2010 EDN China Innovation Awards.

"Enhancement-mode eGaN by Efficient Power Conversion Corporation was honored with Editor's Choice Award by EDN China Innovation Award's panel of judges based on the online voting by the Chinese design engineers. It is the best-recognized product yet to be fully adopted in target markets. We also recognize EPC's potential significant contribution to the Chinese engineering communities with its innovations to set a new course in the power technology roadmap", said William Zhang, Publisher of EDN China.

“We are proud that the panel of judges and readers of EDN China have selected eGaN FET products from the more than 150 entrants. This award substantiates that EPC’s enhancement-mode GaN power transistors represent a major breakthrough in power conversion technology. The award supports our belief that performance from silicon-based MOSFETs has reached the end of the road and that eGaN technology will lead the way for continued increases in performance in power transistors.” said Alex Lidow, EPC’s co-founder and Chief Executive Officer.

Spanning a range of 40 Volts to 200 Volts, and 4 milliohms to 100 milliohms, eGaN FETs demonstrate significant performance advantages over state-of-the-art silicon-based power MOSFETs. EPC’s technology produces devices that are smaller than similar resistance silicon devices and have many times superior switching performance.

Applications that benefit from this eGaN performance are DC-DC power supplies, point-of-load converters, class D audio amplifiers, notebook and netbook computers, solar microinverters, Power over Ethernet (PoE), LED drive circuits, telecom base stations, and cell phones, to name just a few.

Products based on eGaN technology are available today and are priced between $1.12 and $5.00 in 1k quantities. They are immediately available through Digi-Key Corporation at

EPC is the leader in enhancement mode Gallium Nitride based power management devices. EPC is the first to introduce enhancement-mode Gallium-Nitride-on-Silicon (eGaNTM) FETs as power MOSFET replacements in applications such as servers, netbooks, notebooks, LED lighting, cell phones, base stations, microinverters, and class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs. Visit our web site:

Press contact: Joe Engle tel: 310.986.0350 email:






May, 2010
Greenliant Systems Acquires NANDrive, NAND Controller and Specialty Flash Memory Assets from Microchip Technology

Click here to read the press release

Click here to read the announcement letter from Greenlight™s CEO.






intersil-TechwellMay, 2010
Intersil Completes its Acquisition of Techwell, Inc.

"The Techwell acquisition brings Intersil unique capabilities that complement our industrial video market businesses," said Dave Bell, Intersil's President and Chief Executive Officer. "We look forward to Techwell's mixed signal video products helping to significantly increase our overall industrial business, which will become our largest end market," continued Mr. Bell.

« Read Full Press Release Here » « Read FAQs Here »

With the recent merger of Intersil and Techwell, the business integration process has begun with Terry Brophy leading the effort. Look for an upcoming communication on how the customer services and order management processes are to operate during the transition period. For questions regarding the sales integration, please contact Dave Loftus or Chris Lister.






Intersil_Company_OverviewMay, 2010
Intersil:  New Corporate Overview

Full corporate overview that can be used as introduction or supportive material in any external presentation.
Note: Large File. File size: 11.1 MB
« Download Here »






January 2009 -- Intersil
Intersil Press Releases






DECEMBER 14, 2007
Three of INNOVATECH’S Principals have been awarded EDN’s Hot 100 Products of 2007 ( !!






Tuesday November 6, 9:00 am ET -- Cypress
Cypress's PSoC(R) CapSense(TM) Solution Is the Leader for Capacitive Sensing in Handsets With Over 70 Percent Market Share, According to Industry (40 million PSoC® CapSense™ devices into mobile phones from across the globe in less than two years) !!
Click here for details






October, 2007 -- Cypress
Cypress Expands InstaClock™ Family

Cypress has released version 1.05 of the popular InstaClock solution that provides a fast and simple way to generate common frequency devices on your own PC – instead of waiting days or weeks for samples from another supplier. The new version offers 67 additional configurations for a total of more than 100 options now available for the popular CY22800 device. This new release offers a wide range of predefined configurations targeted towards USB, Ethernet, PCI, Audio/Video and CPU Clock frequencies. The devices generated by the InstaClock software can be ordered as standard part numbers at authorized distributors.

Cypress also has introduced the new CY22801 device, which allows users to create custom configurations. The CY22801 is compatible with Cypress’s CyClocksRT software and can be programmed using the InstaClock USB programmer. Now users can create a clock that will meet their specific timing requirements if they cannot find a predefined configuration within the InstaClock software for the CY22800.

See for yourself how fast and easy InstaClock really is. Visit the InstaClock website today to get an InstaClock kit, download a datasheet, see a cross-reference guide, or download InstaClock software

Visit the InstaClock Website to learn more, and download the latest InstaClock software to view all the available options. Remember, use the Configure Device feature to help select which options are suited for your requirements.






October, 2007 -- Inventek Systems
Enhanced Navigation Performance SiRF III GPS module

Inventek Systems ISM300F1-C3 and ISM300F1-C4 product launch

The Inventek ISM300x is a 20-channel Global Positioning System (GPS) receiver module (C4 is SBAS enabled) offered in an extremely compact Surface Mount Device (SMD) module form factor The module provides high sensitivity, high gain, and low power. It is designed for a broad spectrum of OEM applications and is based on the fast and deep GPS signal search capabilities of the SiRFStarIII architecture.

Enhancements include:

Enhanced Navigation

  • Improved cross-correlation detection
  • Altered search strategy for improved weak-signal acquisition
  • Improved positioning results, particularly in transitional environments
  • Improved EGNOS

Improved Jamming Mitigation

  • Better identification and dismissal of jamming signals through enhanced Carrier Wave (CW) detection.

Improved Ephemeris Availability

  • Incremental ephemeris collection allowing quicker time-to-first-fix (TTFF)
  • Improved ephemeris collection under challenging dynamics (Movement)

Flexible Power Control

  • Improved hardware “on/off” control - 10uA mode
  • For implementations that do not include hardware “on/off” control, software can now be used to turn off the receiver

This module is designed for quick and easy integration into GPS-related applications - especially compact size devices - such as:

Hand-held Devices for Personal Positioning and Navigation
PDA, Pocket PC and other computing devices
Fleet Management / Asset Tracking
AVL and Location-Based Services

At Inventek Systems our top priority is to service our customers as an extension of their own organization. We take great pride in earning and developing long term partnerships as we strive to exceed your expectations.

Our expertise in GPS Modular solutions combined with a very unique and compelling business model, positions us as the premier leader in market competitive system solutions across a wide range of GPS applications.






September 16, 2007
INVENTEK SYSTEMS and NEC ELECTRONICS AMERICA introduce the AF-ISM300-EV850-TFT, a 3.5” QVGA PANEL, V850 32b MCU AND ISM300x GPS Development Platform at the Embedded Systems Conference in Boston at the Hynes Convention Center September 19th-20th, 2007 (Booth location number 1009)!!!






June 5, 2007






February 27, 2007


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